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Physics-Based Analytical Model for Input, Output, and Reverse Capacitance  of a GaN HEMT With the Field-Plate Structure | Semantic Scholar
Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure | Semantic Scholar

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated  Gate Field Plate | SpringerLink
Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate | SpringerLink

Materials | Free Full-Text | Hysteresis in Lanthanide Aluminum Oxides  Observed by Fast Pulse CV Measurement
Materials | Free Full-Text | Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Thermally Stable, Efficient, Vapor Deposited Inorganic Perovskite Solar  Cells | ACS Applied Energy Materials
Thermally Stable, Efficient, Vapor Deposited Inorganic Perovskite Solar Cells | ACS Applied Energy Materials

VDMOSFET reliability dependence on the integrated drain‐source junction |  Emerald Insight
VDMOSFET reliability dependence on the integrated drain‐source junction | Emerald Insight

Gigabit-per-second dual-gate MESFET switching and multiplexer operation for  high-speed fiber-optic systems
Gigabit-per-second dual-gate MESFET switching and multiplexer operation for high-speed fiber-optic systems

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance  of a GaN HEMT With the Field-Plate Structure | Semantic Scholar
Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure | Semantic Scholar

Variation of capacitance with frequency | Download Scientific Diagram
Variation of capacitance with frequency | Download Scientific Diagram

Materials | Free Full-Text | Hysteresis in Lanthanide Aluminum Oxides  Observed by Fast Pulse CV Measurement
Materials | Free Full-Text | Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Capacitance-voltage profiling of MOS capacitors: A case study of hands-on  semiconductor testing for an undergraduate laboratory
Capacitance-voltage profiling of MOS capacitors: A case study of hands-on semiconductor testing for an undergraduate laboratory

Interface defects detection and quantification on a Si/SiO2 structure
Interface defects detection and quantification on a Si/SiO2 structure

Degradation of the Capacitance-Voltage Behaviors of the Low-Temperature  Polysilicon TFTs under DC Stress
Degradation of the Capacitance-Voltage Behaviors of the Low-Temperature Polysilicon TFTs under DC Stress

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance  of a GaN HEMT With the Field-Plate Structure | Semantic Scholar
Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure | Semantic Scholar

Energies | Free Full-Text | Asymmetric Split-Gate 4H-SiC MOSFET with  Embedded Schottky Barrier Diode for High-Frequency Applications
Energies | Free Full-Text | Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

Quantum Capacitance of Two-Dimensional-Material-Based Supercapacitor  Electrodes | Energy & Fuels
Quantum Capacitance of Two-Dimensional-Material-Based Supercapacitor Electrodes | Energy & Fuels

Variation of capacitance with frequency | Download Scientific Diagram
Variation of capacitance with frequency | Download Scientific Diagram

Quantum Capacitance of Two-Dimensional-Material-Based Supercapacitor  Electrodes | Energy & Fuels
Quantum Capacitance of Two-Dimensional-Material-Based Supercapacitor Electrodes | Energy & Fuels

Electronics | Free Full-Text | 3.3-kV 4H-SiC Split-Gate DMOSFET with  Floating p+ Polysilicon for High-Frequency Applications
Electronics | Free Full-Text | 3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications

Hysteresis in the I – V various channel lengths. W = 10 | Download  Scientific Diagram
Hysteresis in the I – V various channel lengths. W = 10 | Download Scientific Diagram

Applied Sciences | Free Full-Text | Lateral Capacitance–Voltage Method of  NanoMOSFET for Detecting the Hot Carrier Injection
Applied Sciences | Free Full-Text | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

Applied Sciences | Free Full-Text | Lateral Capacitance–Voltage Method of  NanoMOSFET for Detecting the Hot Carrier Injection
Applied Sciences | Free Full-Text | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

Applied Sciences | Free Full-Text | Lateral Capacitance–Voltage Method of  NanoMOSFET for Detecting the Hot Carrier Injection
Applied Sciences | Free Full-Text | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

Degradation of the Capacitance-Voltage Behaviors of the Low-Temperature  Polysilicon TFTs under DC Stress
Degradation of the Capacitance-Voltage Behaviors of the Low-Temperature Polysilicon TFTs under DC Stress

Capacitor Lab Report | PDF | Volt | Capacitor
Capacitor Lab Report | PDF | Volt | Capacitor

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance  of a GaN HEMT With the Field-Plate Structure | Semantic Scholar
Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure | Semantic Scholar

PDF] Correlation between deep depletion and current–voltage saturation of  SrTiO3 gate dielectric capacitor | Semantic Scholar
PDF] Correlation between deep depletion and current–voltage saturation of SrTiO3 gate dielectric capacitor | Semantic Scholar

Interplay of quantum capacitance with Van der Waals forces, intercalation,  co-intercalation, and the number of MoS2 layers - ScienceDirect
Interplay of quantum capacitance with Van der Waals forces, intercalation, co-intercalation, and the number of MoS2 layers - ScienceDirect